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MOS Capacitor
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.8K
Equivalent Capacitance
2.4K
Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...
The following strategies are adopted to calculate...
2.4K
Equivalent Capacitance
870
From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...
870
Capacitor With A Dielectric
5.3K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
5.3K
Design Example: Capacitance Multiplier Circuit
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In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
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Dielectric Polarization in a Capacitor
6.5K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
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TiO2-Based Indium Phosphide Metal-Oxide-Semiconductor Capacitor with High Capacitance Density.
Journal of Nanoscience and Nanotechnology
|September 11, 2015
Summary
Researchers developed a low-temperature Indium Phosphide (InP) p-type Metal-Oxide-Semiconductor (MOS) device. This device achieves high capacitance density and low leakage current, crucial for advanced semiconductor applications.
Area of Science:
- Semiconductor Physics
- Materials Science
- Electrical Engineering
Background:
- Indium Phosphide (InP) offers high carrier mobility for advanced electronic devices.
- Developing low-temperature fabrication processes is essential for cost-effective semiconductor manufacturing.
- Metal-Oxide-Semiconductor (MOS) devices are fundamental components in modern electronics.
Purpose of the Study:
- To report a novel low-temperature InP p-type MOS device.
- To achieve high capacitance density and low leakage current in InP MOS.
- To explore the potential of InP MOS for future high-mobility CMOS devices.
Main Methods:
- Fabrication of InP p-type MOS devices at low temperatures.
- Utilized a high-κ TiLaO dielectric layer.
- Incorporated an ultra-thin SiO2 buffer layer (< 0.5 nm).
Main Results:
- Achieved a high capacitance density of 2.7 µF/cm².
- Obtained a low leakage current of 0.77 A/cm² at 1 V.
- Demonstrated aggressive scaling of Equivalent Oxide Thickness (EOT) to < 1 nm.
Conclusions:
- The developed InP p-MOS exhibits excellent electrical characteristics.
- The stacked TiLaO/SiO2 dielectric enables significant EOT scaling.
- This technology holds promise for next-generation high-mobility III-V CMOS devices.

