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Published on: March 4, 2021
Chemical Visualization of a GaN p-n junction by XPS
Deniz Caliskan1, Hikmet Sezen2, Ekmel Ozbay1
1Nanotechnology Research Center, Department of Electrical and Electronics Engineering and Department of Physics, Bilkent University, 06800, Ankara, Turkey.
Abstract:
We report on an operando XPS investigation of a GaN diode, by recording the Ga2p3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device.
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