Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with...

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Two-dimensional van der Waals (2D vdWs) materials offer unique properties for future electronics.
• Black phosphorus (BP), a 2D vdWs material, shows promise for electronic and optoelectronic devices due to its high mobility and narrow band gap.

Purpose of the Study:

• To demonstrate a few-layered black phosphorus (BP)-based nonvolatile memory transistor.
• To investigate the performance of BP-based ferroelectric transistors with a poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) gate insulator.
• To explore the integration of these devices into memory inverter circuits for advanced applications.

Main Methods:

• Fabrication of a few-layered BP transistor with a P(VDF-TrFE) ferroelectric top gate insulator.
• Characterization of the transistor's electrical properties at room temperature in ambient air.
• Implementation and testing of resistive-load and complementary memory inverter circuits using BP and molybdenum disulfide (MoS2).

Main Results:

• The BP-based ferroelectric transistors exhibited a clear memory window and operated at room temperature in ambient air.
• The transistors displayed p-type characteristics with a high linear mobility of 1159 cm(2) V(-1) s(-1) and a 10(3) on/off current ratio.
• Integrated memory inverter circuits showed a 15 V memory window and 95% memory output voltage efficiency.

Conclusions:

• Few-layered BP with a P(VDF-TrFE) gate insulator forms a promising nonvolatile memory transistor.
• The device's p-type characteristics and high performance are suitable for next-generation memory devices.
• The successful implementation of memory inverter circuits demonstrates potential for integrated memory applications.