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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
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Grain Size and Interface Dependence of Bias Stress Stability of n-Type Organic Field Effect Transistors

Rizwan Ahmed1,2, Clemens Simbrunner1,3, M A Baig2

  • 1Institute of Semiconductor and Solid State Physics, Johannes Kepler University , A-4040 Linz, Austria.

ACS Applied Materials & Interfaces
|September 19, 2015
PubMed

Keywords:
C60bias stresscharge trapping in semiconductor and dielectric interfacegrain boundariesn-type OFETs stabilityparylenethreshold voltage shift

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