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Quantized Conduction and High Mobility in Selectively Grown In(x)Ga(1-x)As Nanowires

Cezar B Zota1, David Lindgren1, Lars-Erik Wernersson1

  • 1Department of Electrical and Information Technology and ‡Division of Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden.

ACS Nano
|September 22, 2015
PubMed
Summary

We measured quantized conductance and quasi-ballistic transport in indium gallium arsenide (InGaAs) nanowires. These findings reveal near-intrinsic electrical properties and high electron mobility, crucial for advanced electronic devices.

Keywords:
InGaAsRamanballistic transportelectric transportfield-effect transistorsmobilitynanowirephotoluminescenceselective regrowth

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