Magnetoresistive-coupled transistor using the Weyl semimetal NbP

Area of Science:

• Condensed Matter Physics
• Materials Science
• Quantum Computing

Background:

• Conventional transistors rely on electric fields to modulate charge carrier concentration, facing limitations in electric field attenuation and material properties.
• These limitations include restricted electron mobility and charge carrier density in semiconductor channels, hindering performance and power efficiency.

Purpose of the Study:

• To demonstrate a new transistor operating mechanism distinct from conventional field-effect transistors.
• To explore the potential of Weyl semimetals, specifically NbP, as channel materials for advanced transistor applications.

Main Methods:

• Fabrication of a transistor utilizing a Weyl semimetal (NbP) as the channel material.
• Modulation of channel resistivity using a magnetic field generated by an integrated superconductor.

Main Results:

• Demonstrated transistor operation based on magnetic field modulation of NbP resistivity.
• Achieved significant transconductance amplification at nanowatt power levels due to high electron mobility (>1,000,000 cm²/Vs) and strong magnetoresistive coupling.

Conclusions:

• The developed transistor offers a novel, low-power alternative to conventional semiconductor devices.
• This technology holds promise for enabling new low-power amplifiers, particularly for qubit readout in quantum computers.