Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Fermi Level Dynamics01:12

Fermi Level Dynamics

1.0K
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
1.0K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Scaling nanoribbon transistors with monolayer transition metal dichalcogenides.

Nature nanotechnology·2026
Same author

Gate-Dielectric Engineering with an Ultrathin Silicon Oxide Interfacial Dipole Layer for Low-Leakage Oxide-Semiconductor Memories.

Nano letters·2026
Same author

Electrothermally Induced Channel Formation in a Spin-Crossover Neuron.

ACS nano·2026
Same author

Nondestructive Atomic Defect Quantification of Two-Dimensional Materials and Devices.

ACS applied materials & interfaces·2026
Same author

Physics-Embedded Neural Network: A Novel Approach to Design Polymeric Materials.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Combined use of microalgae-bacteria-fungi symbionts with 5-deoxystrigol to increase the removal of nutrients and antibiotics from swine wastewater during different breeding periods.

Bioresource technology·2026
Same journal

Monolithic Axial InGaAs Quantum Dot Emitters in GaAs-Based Nanowires via Sb-Mediated Facet Engineering.

Nano letters·2026
Same journal

Electrical Imaging of DNA Substructures Using Quasi-Static Nanopore Scanning.

Nano letters·2026
Same journal

Structural Basis of Hemoglobin Amyloid Fibrils Revealed by cryo-EM and Molecular Dynamics Simulations.

Nano letters·2026
Same journal

Rashba-Related Spin-Selective Effect in 2D Chiral Perovskites with Achiral Organic Cation Spacers.

Nano letters·2026
Same journal

Visualizing Superconducting Gap Modulation Induced by Pair-Breaking Scattering Interference in Bulk FeSe.

Nano letters·2026
Same journal

Generalized Geometric Phase for Coupled Meta-Atoms.

Nano letters·2026
See all related articles

Related Experiment Video

Updated: Apr 3, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.2K

Engineering Ultra-Low Work Function of Graphene.

Hongyuan Yuan, Shuai Chang, Igor Bargatin1

  • 1Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States.

Nano Letters
|September 25, 2015
PubMed
Summary
This summary is machine-generated.

Researchers achieved an ultralow work function graphene using electrostatic gating and Cs/O coating. This breakthrough offers the lowest reported work function for a conductive, nondiamond material, vital for electron emission applications.

Keywords:
Grapheneelectrostatic gatingphotoemissionscanning Kelvin probe force microscopytransistorwork function

More Related Videos

Development of a 3D Graphene Electrode Dielectrophoretic Device
11:15

Development of a 3D Graphene Electrode Dielectrophoretic Device

Published on: June 22, 2014

12.6K
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
07:00

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Published on: June 25, 2020

7.8K

Related Experiment Videos

Last Updated: Apr 3, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.2K
Development of a 3D Graphene Electrode Dielectrophoretic Device
11:15

Development of a 3D Graphene Electrode Dielectrophoretic Device

Published on: June 22, 2014

12.6K
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
07:00

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Published on: June 25, 2020

7.8K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Surface Science

Background:

  • Low work function materials are essential for efficient energy conversion and electron emission devices.
  • Graphene's unique electronic properties make it a promising candidate for such applications, but achieving ultralow work functions has been challenging.

Purpose of the Study:

  • To demonstrate a novel method for achieving an ultralow work function in graphene.
  • To explore the combined effects of electrostatic gating and surface functionalization on graphene's work function.

Main Methods:

  • Fabrication of a device using large-area monolayer graphene grown by chemical vapor deposition (CVD) on HfO2/Si.
  • Utilizing electrostatic gating to induce capacitive charge accumulation in graphene.
  • Employing scanning Kelvin probe force microscopy (SKPFM) and conductivity measurements to quantify work function changes.
  • Applying Cesium/Oxygen (Cs/O) surface coating and measuring work function using photoemission spectroscopy in ultrahigh vacuum (UHV).

Main Results:

  • Electrostatic gating induced a significant work function change of over 0.7 eV in graphene.
  • The Cs/O surface coating further reduced the work function by nearly 1 eV.
  • This achieved work function is the lowest reported for any conductive, nondiamond material to date.

Conclusions:

  • Combining electrostatic gating with Cs/O surface coating is a highly effective strategy for achieving ultralow work function graphene.
  • The developed method provides a pathway to engineer graphene for advanced electron emission and energy conversion applications.
  • This work establishes a new benchmark for ultralow work function materials in condensed matter physics and materials science.