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Updated: Apr 1, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
M S Nevius1, M Conrad1, F Wang1
1The Georgia Institute of Technology, Atlanta, Georgia 30332-0430, USA.
Researchers created semiconducting graphene with a significant band gap for the first time. Epitaxial growth and improved methods produced a band gap over 0.5 eV, demonstrating order is key for viable graphene electronics.
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