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A mercury(II) ion sensor device based on an organic field effect transistor with an extended-gate modified by
Tsuyoshi Minami1, Yui Sasaki1, Tsukuru Minamiki1
1Research Center for Organic Electronics (ROEL), Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan. tminami@yz.yamagata-u.ac.jp.
Chemical Communications (Cambridge, England)
|October 15, 2015
Abstract:
Herein, we report an organic field effect transistor (OFET) with an extended-gate modified by an artificial receptor for the detection of mercury(II) ions (Hg(2+)) in water. The sensor device is easy to fabricate, reusable, disposable, and portable. Thus OFET sensors could be applied for low-cost on-site detection of Hg(2+).
