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Atomically Traceable Nanostructure Fabrication
Published on: July 17, 2015
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Visibility of atomically-thin layered materials buried in silicon dioxide
Ergun Simsek1, Bablu Mukherjee
1Department of Electrical and Computer Engineering, School of Engineering and Applied Science, The George Washington University, Washington, DC 20052, USA.
Nanotechnology
|October 17, 2015
Summary
Adding thin oxide films to atomically-thin layered materials (ATLM) enhances their optical properties. This study maps color contrast for various ATLM, optimizing oxide film thicknesses for improved optoelectronics.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Atomically-thin layered materials (ATLM) are crucial for optoelectronics.
- Coating ATLM with oxide or nitride films enhances optical/electrical properties and environmental stability.
Purpose of the Study:
- To map the optical color contrast of various ATLM.
- To investigate the effect of oxide film thickness on color contrast.
- To optimize film thicknesses for enhanced optoelectronic applications.
Main Methods:
- Calculated reflection contrast for ATLM sandwiched between SiO2 films on a Si substrate.
- Analyzed color contrast across broadband and narrow-band (green/red filtering) wavelengths.
- Mapped contrast for graphene, MoS2, MoSe2, WS2, and WSe2.
Main Results:
- Demonstrated the possibility of achieving good average optical color contrast with additional oxide films.
- Presented a comprehensive map of optical color contrast for various ATLM.
- Identified optimized SiO2 film thicknesses for maximizing color contrast.
Conclusions:
- Thin oxide films significantly enhance the optical color contrast of ATLM.
- Optimized oxide film thicknesses are critical for maximizing contrast in optoelectronic devices.
- This work provides a guide for designing ATLM-based optoelectronic devices with improved visual characteristics.
