Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Network Covalent Solids02:18

Network Covalent Solids

16.5K
Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
16.5K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.3K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.3K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Prognostic Significance and Immune Landscape of Neuroendocrine Differentiation-Related Genes in Non-Small Cell Lung Cancer.

Biological procedures online·2026
Same author

A Review and Perspective of Techniques for Autonomous Robotic Ultrasound Acquisitions.

Sensors (Basel, Switzerland)·2026
Same author

Genetic deletion of miR-200a/200b increases growth and feed conversion efficiency in yellow catfish.

Science China. Life sciences·2026
Same author

Exploiting Mg-Interdiffusion-Driven Work-Function Reduction in Ti/Mg/Ti Multilayers to Achieve Low-Resistivity Ohmic Contacts to (001) β-Ga<sub>2</sub>O<sub>3</sub>.

ACS nano·2025
Same author

Buc Maintains Maternal RNA Stability and Embryogenesis in Zebrafish.

Cells·2025
Same author

NAD<sup>+</sup> supplementation augments the efficacy of the PARP1 inhibitor PJ34 in a 6-OHDA-induced model of Parkinson's disease.

Genes & diseases·2025

Related Experiment Video

Updated: Mar 30, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.2K

Review of Graphene as a Solid State Diffusion Barrier.

Wayne K Morrow1, Stephen J Pearton1, Fan Ren2

  • 1Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32606, USA.

Small (Weinheim an Der Bergstrasse, Germany)
|November 3, 2015
PubMed
Summary

Graphene shows promise as a single-layer diffusion barrier in microelectronics, preventing metal intermixing. Its effectiveness depends on metal bonding, with chemisorbed metals forming protective carbides and physisorbed metals risking adhesion failure.

Keywords:
diffusiondiffusion barriersgraphenesolid state

More Related Videos

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
14:52

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding

Published on: September 23, 2018

9.5K
Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

17.3K

Related Experiment Videos

Last Updated: Mar 30, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.2K
Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding
14:52

Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding

Published on: September 23, 2018

9.5K
Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

17.3K

Area of Science:

  • Materials Science
  • Solid-State Physics
  • Nanotechnology

Background:

  • Conventional diffusion barriers are 3D films crucial for preventing material intermixing in microelectronics.
  • Adhesion to adjacent layers is vital for diffusion barrier performance.
  • Graphene, a 2D material, is explored as a potential alternative diffusion barrier.

Purpose of the Study:

  • To review the effectiveness of single-layer graphene as a solid-state diffusion barrier in microelectronic metal schemes.
  • To discuss specific examples and mechanisms of graphene's performance as a diffusion barrier.
  • To identify areas for future research to optimize graphene's barrier properties.

Main Methods:

  • Review of existing literature on graphene as a diffusion barrier.
  • Analysis of metal-graphene interactions, categorizing metals as physisorbed (weakly bonding) or chemisorbed (strongly bonding).
  • Examination of barrier performance based on substrate and metal type, including silicon substrates and common microelectronic metal stacks.

Main Results:

  • Graphene acts as an effective diffusion barrier with chemisorbed metals on silicon substrates due to carbide layer formation.
  • Physisorbed metals lead to barrier failure via adhesion loss at the metal-graphene interface.
  • Graphene can enhance binding energy between metal films, but certain metal combinations are detrimental.

Conclusions:

  • Graphene holds positive prospects as a solid-state diffusion barrier in microelectronics.
  • Further research is needed to understand mechanisms influencing graphene's barrier properties, especially concerning defects.
  • Broader experimental investigation across various metals and microelectronic structures is required.