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Enhancing CVD graphene's inter-grain connectivity by a graphite promoter
Ya-Ping Hsieh1, Yi-Jing Chiu, Mario Hofmann
1Graduate of Institute of Opto-Mechatronics, National Chung Cheng University, 168, University Rd., Min-Hsiung, Chia-Yi, 62102, Taiwan. yphsieh@ccu.edu.tw.
Nanoscale
|November 6, 2015
Summary
Improving graphene quality for future applications is crucial. Researchers enhanced inter-grain connectivity in chemical vapor deposition (CVD) graphene using a promoter material, significantly boosting electrical performance and carrier mobility.
Area of Science:
- Materials Science
- Nanotechnology
- Condensed Matter Physics
Background:
- High-quality graphene synthesis is essential for advanced applications.
- Chemical vapor deposition (CVD) is a promising method, but grain boundary connectivity limits performance.
- Defects at grain boundaries hinder graphene's electrical and mechanical properties.
Purpose of the Study:
- To improve the inter-grain connectivity of CVD-grown graphene.
- To enhance the electrical performance of large-scale graphene films.
- To investigate the effect of promoter materials on graphene grain boundaries.
Main Methods:
- A two-step growth process was developed to enhance grain connectivity.
- A promoter material was introduced near the growth substrate.
- Graphite was identified as a highly effective promoter due to its catalytic activity.
- A novel cap-design facilitated uniform, large-scale improvements.
Main Results:
- The promoter significantly reduced structural defects at graphene grain boundaries.
- Inter-grain connectivity was enhanced without altering graphene grain morphology.
- Carrier mobility in large-scale graphene increased from 2700 cm(2) V(-1) s(-1) to 4000 cm(2) V(-1) s(-1).
Conclusions:
- Adding a promoter material during CVD growth effectively improves graphene inter-grain connectivity.
- This method offers a scalable approach to producing higher-performance graphene.
- The findings pave the way for enhanced graphene applications in electronics and beyond.

