Related Experiment Video
Updated: Mar 30, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
Gain and loss as a function of current density and temperature in interband cascade lasers
Abstract:
We characterize the internal efficiency, internal loss, and optical gain versus current density in 7-stage interband cascade lasers operating at λ=3.1 and 3.45 μm using a cavity-length study of the external differential quantum efficiency (EDQE) and threshold current density at temperatures between 300 and 345 K. We find that the pronounced efficiency droop of the EDQE at high current densities is primarily due to an increase in the internal loss rather than a reduction in the internal efficiency. On the other hand, if the current density J is fixed, the temperature variation of the EDQE at that J is due primarily to a decrease of the internal efficiency. The gain versus current density is fit well by a logarithmic relationship, although the magnitude of the experimental gain is >20% below the theoretical estimate.
Related Concept Videos
Bewley Lattice Diagram
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Small-Signal Analysis of MOSFET Amplifiers
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

