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Suppressing Segregation in Highly Phosphorus Doped Silicon Monolayers.

Joris G Keizer1, Sebastian Koelling2, Paul M Koenraad2

  • 1Centre for Quantum Computation and Communication Technology, Australian Reseach Council Centre of Excellence, School of Physics, University of New South Wales , Sydney, New South Wales 2052, Australia.

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Summary

This study introduces locking layers to prevent phosphorus (P) dopant segregation in silicon, crucial for quantum computing. These layers enable ultra-sharp dopant profiles essential for advanced microelectronics.

Keywords:
active carrier densitydelta-layerlocking layermonolayerphosphorusrapid thermal annealsegregationsilicon

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Quantum Computing

Background:

  • Achieving sharply defined dopant profiles and low resistivity is critical for microelectronics and silicon (Si):Phosphorus (P) quantum computers.
  • Dopant segregation during growth hinders the creation of precise dopant profiles.

Purpose of the Study:

  • To investigate the use of thin, room-temperature grown silicon "locking layers" to limit dopant segregation in highly phosphorus-doped silicon monolayers.
  • To demonstrate the effectiveness of locking layers in suppressing phosphorus segregation and enabling sharp dopant profiles.

Main Methods:

  • Utilized secondary ion mass spectroscopy (SIMS) and atom probe tomography (APT) to analyze dopant profiles.
  • Employed scanning tunneling microscopy (STM) to assess surface epitaxy.
  • Conducted magnetotransport measurements to determine active carrier density.
  • Applied rapid thermal annealing (RTA) to optimize dopant activation.

Main Results:

  • Locking layers effectively suppressed phosphorus segregation in epitaxial silicon monolayers grown at low temperatures.
  • STM confirmed epitaxial growth of the locking layer.
  • Magnetotransport measurements showed a 50% decrease in active carrier density, indicating reduced dopant activation.
  • Optimized RTA restored active carrier density to 3.4 × 10^14 cm^-2 while maintaining an ultra-sharp profile (FWHM 1.0 nm, peak concentration 1.2 × 10^21 cm^-3).

Conclusions:

  • Locking layers are effective in controlling dopant segregation in Si:P monolayers.
  • A combination of locking layers and RTA allows for precise control over dopant profiles and activation, crucial for advanced semiconductor devices and quantum computing applications.