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Characterization of Field Effect Transistor Biosensors Fabricated Using Layer-by-Layer Nanoassembly Process
Journal of Nanoscience and Nanotechnology
|December 19, 2015
Summary
This study presents a novel Carbon Nanotube Thin Film (CNTF) field-effect transistor (FET) biosensor for detecting Immunoglobulin G (IgG). The CNTF-FET biosensor achieves sensitive IgG detection down to 1 pg/mL, simplifying fabrication compared to single CNT devices.
Area of Science:
- Nanotechnology
- Biosensors
- Transducers
Background:
- Single carbon nanotube (CNT) immunosensors face fabrication complexities.
- Field-effect transistors (FETs) offer a potential platform for simplified biosensing.
Purpose of the Study:
- To develop a Carbon Nanotube Thin Film (CNTF) FET biosensor.
- To demonstrate sensitive detection of Immunoglobulin G (IgG) using the CNTF-FET.
Main Methods:
- Fabrication of a CNTF channel using photolithography and electrostatic layer-by-layer self-assembly (LbL).
- Characterization of the device as a p-type transistor.
- Immunoassay utilizing the bio-affinity interaction between Protein A and rabbit IgG.
Main Results:
- The fabricated device functions as a p-type transistor.
- The CNTF-FET biosensor successfully detected rabbit IgG.
- Achieved a limit of detection as low as 1 pg/mL for IgG.
Conclusions:
- CNTF-FETs provide a viable alternative to single CNTs for immunosensor fabrication.
- The developed biosensor demonstrates high sensitivity for IgG detection.
- This approach simplifies fabrication while maintaining excellent sensing capabilities.
