Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Quasi-periodic X-ray eruptions years after a nearby tidal disruption event.

Nature·2024
Same author

Using AI/ML to predict blending performance and process sensitivity for Continuous Direct Compression (CDC).

International journal of pharmaceutics·2024
Same author

Application of Positron Emission Particle Tracking (PEPT) for the evaluation of powder behaviour in an incline linear blender for Continuous Direct Compression (CDC).

International journal of pharmaceutics·2023
Same author

Correction to: A synopsis of global frontiers in fertility preservation.

Journal of assisted reproduction and genetics·2022
Same author

A synopsis of global frontiers in fertility preservation.

Journal of assisted reproduction and genetics·2022
Same author

Vaccination side effects.

British dental journal·2021
Same journal

Self-Powered Fine Dust Filtration Using Triboelectrification-Induced Electric Field.

Nanoscale research letters·2022
Same journal

Bio-distribution of Carbon Nanoparticles Studied by Photoacoustic Measurements.

Nanoscale research letters·2022
Same journal

Effects of High-Temperature Growth of Dislocation Filter Layers in GaAs-on-Si.

Nanoscale research letters·2022
Same journal

Correction: Assembly of Carbon Dots into Frameworks with Enhanced Stability and Antibacterial Activity.

Nanoscale research letters·2022
Same journal

Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs.

Nanoscale research letters·2022
Same journal

Gold Nanoparticles Enhancing Generation of ROS for Cs-137 Radiotherapy.

Nanoscale research letters·2022
See all related articles

Related Experiment Video

Updated: Mar 27, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.8K

Free-Volume Nanostructurization in Ga-Modified As2Se3 Glass.

Ya Shpotyuk1,2,3, A Ingram4, O Shpotyuk5,6

  • 1Department of Electronics, Ivan Franko National University of Lviv, 107, Tarnavskogo str., 79017, Lviv, Ukraine. yashpotyuk@gmail.com.

Nanoscale Research Letters
|January 14, 2016
PubMed
Summary
This summary is machine-generated.

Gallium (Ga) doping in glassy arsenic selenide (As2Se3) alters void structures and promotes crystalline Ga2Se3 formation. This nanostructurization impacts material properties, offering insights into glassy alloy evolution.

Keywords:
ChalcogenidesCrystallizationNanostructurizationPhase separationPositron annihilation lifetime spectroscopy

More Related Videos

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.8K
Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films
08:38

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films

Published on: August 19, 2016

9.2K

Related Experiment Videos

Last Updated: Mar 27, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.8K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.8K
Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films
08:38

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films

Published on: August 19, 2016

9.2K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Glassy arsenic selenide (As2Se3) exhibits intrinsic nanostructurization and free-volume voids.
  • Gallium (Ga) doping is explored to modify the structure and properties of As2Se3.

Purpose of the Study:

  • To investigate the stages of nanostructurization in Ga-doped As2Se3 glass.
  • To understand the evolution of free-volume voids and phase separation with increasing Ga content.

Main Methods:

  • Positron annihilation lifetime spectroscopy (PALS) to probe free-volume voids.
  • X-ray powder diffraction (XRD) for crystalline phase identification.
  • Scanning electron microscopy with energy-dispersive X-ray analysis (SEM-EDX) for microstructural and compositional analysis.

Main Results:

  • Ga doping modifies the native void structure of As2Se3.
  • At low Ga content (<3 at.%), voids associated with As2Se4/2 units dominate.
  • Higher Ga content induces crystalline Ga2Se3 precipitation and growth, altering void characteristics.

Conclusions:

  • Nanostructurization in Ga-doped As2Se3 involves phase separation, nucleation, and growth.
  • The study reveals a transition in void structure and trapping mechanisms with increasing Ga concentration.
  • Ga doping significantly influences the free-volume evolution and phase stability of As2Se3 glassy alloys.