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Related Concept Videos

Van der Waals Interactions01:24

Van der Waals Interactions

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Atoms and molecules interact with each other through intermolecular forces. These electrostatic forces arise from attractive or repulsive interactions between particles with permanent, partial, or temporary charges. The intermolecular forces between neutral atoms and molecules are ion–dipole, dipole–dipole, and dispersion forces, collectively known as van der Waals forces.
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The ideal gas law is an approximation that works well at high temperatures and low pressures. The van der Waals equation of state (named after the Dutch physicist Johannes van der Waals, 1837−1923) improves it by considering two factors.
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sp3d and sp3d 2 Hybridization
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The mathematical expression known as the wave function, ψ, contains information about each orbital and the wavelike properties of electrons in an isolated atom. When atoms are bound together in a molecule, the wave functions combine to produce new mathematical descriptions that have different shapes. This process of combining the wave functions for atomic orbitals is called hybridization and is mathematically accomplished by the linear combination of atomic orbitals. The new orbitals that...
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The ideal gas law is based on two simplifying assumptions: first, that there are no intermolecular attractions between gas molecules, and second, that the volume occupied by the molecules themselves is negligible compared with the volume of the container. However, these assumptions don't hold up under all conditions - specifically, at high pressures and low temperatures, as gas tends to deviate from ideal gas behavior.The van der Waals equation is an enhanced version of the ideal gas law,...
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Valence Bond Theory02:42

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Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
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Fabricating van der Waals Heterostructures with Precise Rotational Alignment
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van der Waals Heterostructures with High Accuracy Rotational Alignment.

Kyounghwan Kim1, Matthew Yankowitz2, Babak Fallahazad1

  • 1Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.

Nano Letters
|February 10, 2016
PubMed
Summary

Researchers created van der Waals heterostructures with precisely aligned layers, demonstrating Bernal-stacked bilayer graphene. This method enables new electronic devices by controlling layer orientation.

Keywords:
Two-dimensionalboron-nitridegrapheneheterostructureresonant tunneling

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Van der Waals (vdW) heterostructures offer tunable electronic properties.
  • Precise control over the relative orientation of constituent layers is crucial for advanced functionalities.
  • Existing methods for creating vdW heterostructures often lack precise rotational alignment control.

Purpose of the Study:

  • To develop a reliable method for fabricating vdW heterostructures with accurate rotational alignment.
  • To demonstrate the successful creation of Bernal-stacked bilayer graphene using this technique.
  • To showcase the potential of this approach for realizing complex heterostructures with orientation-dependent properties.

Main Methods:

  • Successive transfer of individual monolayer graphene flakes to achieve controlled stacking.
  • Raman spectroscopy to analyze the vibrational properties and confirm Bernal stacking.
  • Scanning tunneling microscopy (STM) to investigate surface morphology and detect moiré patterns.
  • Tunneling spectroscopy to probe the electronic density of states.
  • Electrical transport measurements in dual-gated devices to study field-dependent properties.

Main Results:

  • Successfully fabricated Bernal-stacked bilayer graphene with accurate rotational alignment.
  • Raman spectra confirmed Bernal stacking through a characteristic wide 2D band fitting.
  • STM and tunneling spectroscopy showed no moiré pattern and a constant density of states, consistent with Bernal stacking.
  • Demonstrated field-induced band gap opening in dual-gated bilayer graphene.
  • Fabricated resonant tunneling double bilayer graphene heterostructures using hexagonal boron-nitride as a dielectric.

Conclusions:

  • The developed technique enables precise rotational alignment in vdW heterostructures.
  • Bernal-stacked bilayer graphene was successfully realized, validating the method.
  • This approach is applicable for creating complex heterostructures where rotational alignment is critical for functionality, such as resonant tunneling devices.