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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Single donor electronics and quantum functionalities with advanced CMOS technology.

Xavier Jehl1, Yann-Michel Niquet, Marc Sanquer

  • 1Université Grenoble Alpes, INAC, F-38000 Grenoble, France. CEA, INAC-SPSMS F-38000 Grenoble, France.

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|February 13, 2016
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This summary is machine-generated.

This review explores silicon-on-insulator quantum dots for scalable quantum computing. These artificial atoms, fabricated using modified CMOS processes, show promise for room-temperature operation and integration with conventional circuits.

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Area of Science:

  • Quantum dots
  • Semiconductor nanostructures
  • Quantum computing

Background:

  • Quantum dots enable fundamental studies of single donors in nanostructures.
  • Scalability, tunability, and high-temperature operation are crucial for quantum applications.
  • Quantum dots act as artificial atoms for single spin control.

Purpose of the Study:

  • To review silicon-on-insulator (SOI) devices for quantum dot applications.
  • To highlight fabrication using modified industrial CMOS processes for scalability.
  • To demonstrate integration potential with conventional electronics.

Main Methods:

  • Focus on SOI devices fabricated with minor modifications to CMOS processes.
  • Utilize shallow trench or mesa isolation for scalability.
  • Integrate nanoscale devices with CMOS circuits for on-chip radio-frequency (RF) drive.

Main Results:

  • SOI devices are produced using microelectronics facilities with minimal process changes.
  • Demonstrated integration of a nanoscale device with a CMOS circuit for RF drive.
  • Electrostatics in etched silicon nanowire transistors explain device characteristics from 0 to 300 K.

Conclusions:

  • SOI quantum dots offer a scalable path towards quantum technologies.
  • Modified CMOS fabrication enables integration with existing electronics.
  • Understanding electrostatics is key to achieving room-temperature quantum device operation.