Strong coupling between a photon and a hole spin in silicon.

Area of Science:

• Quantum Information Science
• Semiconductor Physics
• Quantum Computing Hardware

Background:

• Semiconductor quantum dots offer a scalable platform for quantum information processing.
• Strong coupling to microwave resonators is crucial for quantum information readout and connectivity.
• Silicon-based quantum dots are attractive due to their compatibility with existing fabrication processes.

Purpose of the Study:

• To demonstrate strong coupling between microwave photons and hole spins in a silicon-based double quantum dot.
• To explore the potential of silicon hole spins for quantum information processing applications.
• To investigate the feasibility of circuit quantum electrodynamics using semiconductor spins.

Main Methods:

• Fabrication of a silicon-based double quantum dot using foundry-compatible metal-oxide-semiconductor processes.
• Integration of the quantum dot with a superconducting microwave resonator.
• Measurement of spin-photon coupling rates by leveraging silicon's intrinsic spin-orbit interaction.

Main Results:

• Demonstrated strong coupling between a microwave photon and a hole spin.
• Achieved a spin-photon coupling rate of 330 MHz, exceeding decoherence rates.
• Utilized the strong spin-orbit interaction in silicon's valence band.

Conclusions:

• Strong coupling between silicon hole spins and microwave photons is experimentally verified.
• This achievement paves the way for scalable quantum information processing using semiconductor quantum dots.
• The results open a realistic pathway for developing circuit quantum electrodynamics with spins in silicon.