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Development of a microwave ion source for ion implantations
N Takahashi1, H Murata1, H Kitami1
1Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555, Japan.
The Review of Scientific Instruments
|March 3, 2016
Summary
A new microwave ion source for ion implantation was developed. Optimized plasma chamber design achieved over 30 mA of extracted P(+) beam current, promising longer operational lifetimes.
Area of Science:
- Physics
- Materials Science
- Engineering
Background:
- Microwave ion sources offer extended operational lifetimes due to minimal consumable parts.
- Ion implantation technology requires efficient and reliable ion sources for semiconductor manufacturing and materials modification.
Purpose of the Study:
- To develop and characterize a novel microwave ion source for ion implantation applications.
- To optimize the plasma chamber geometry for enhanced beam extraction.
- To evaluate the performance of the ion source using phosphorus hydride (PH3) gas.
Main Methods:
- Designed and constructed a new plasma chamber for the microwave ion source.
- Optimized the plasma chamber volume by adjusting the length of an internal boron nitride block.
- Extracted phosphorus positive ion (P(+)) beams at a 25 kV acceleration voltage.
- Utilized phosphorus hydride (PH3) as the source gas.
Main Results:
- The optimized plasma chamber design led to efficient ion generation and extraction.
- Achieved a P(+) beam current exceeding 30 mA.
- Demonstrated the feasibility of using PH3 gas in the developed microwave ion source.
Conclusions:
- The newly developed microwave ion source with an optimized plasma chamber shows significant potential for ion implantation.
- The achieved beam current meets the requirements for various ion implantation applications.
- The design offers a pathway towards long-lifetime, high-performance ion sources.
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