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Development of a microwave ion source for ion implantations

N Takahashi¹, H Murata¹, H Kitami¹

¹Technology Research Center, Sumitomo Heavy Industries Ltd., Yokosuka, Kanagawa 237-8555, Japan.

The Review of Scientific Instruments

|March 3, 2016

Abstract:

A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P(+) beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within the chamber. The extracted P(+) beam current is more than 30 mA, at a 25 kV acceleration voltage, using PH3 gas.

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