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Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
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Controlled lateral anisotropy in correlated manganite heterostructures by interface-engineered oxygen octahedral
1MESA+ Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands.
Nature Materials
|March 8, 2016
Summary
Researchers controlled magnetic properties in manganite heterostructures by engineering the interface oxygen network. This atomic-level control enables potential applications in advanced magnetic random access memory (MRAM) devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Manganite heterostructures offer potential for novel electronic and magnetic devices.
- Controlling magnetic anisotropy at the nanoscale is crucial for developing advanced memory technologies.
Purpose of the Study:
- To demonstrate the manipulation of magnetic and electronic anisotropic properties in manganite heterostructures.
- To explore the role of the oxygen network in controlling magnetic easy axis orientation.
Main Methods:
- Engineering the oxygen network on the unit-cell level in La2/3Sr1/3MnO3 (LSMO) films grown on NdGaO3 (NGO) substrates.
- Investigating the transfer of octahedral rotation from the substrate to the film via oxygen octahedral coupling.
- Analyzing the resulting magnetic and electronic anisotropic properties.
Main Results:
- Demonstrated controlled in-plane rotation of the magnetic easy axis in LSMO films.
- Observed the transfer of octahedral rotation from NGO substrate to LSMO film interface.
- Reported a giant anisotropic transport phenomenon in ultrathin LSMO films.
- Achieved control over lateral magnetic and electronic anisotropies through atomic-scale design.
Conclusions:
- Tailoring the interface oxygen network provides a method to control magnetic and electronic properties in manganite heterostructures.
- This control enables the development of correlated oxide-based magnetic tunnelling junctions with non-collinear magnetization.
- The findings suggest potential applications in miniaturized, high-switching-speed magnetic random access memory (MRAM).
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