Related Experiment Video
Updated: Mar 24, 2026
09:49
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
4.4K
Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory
Susant K Acharya1, Raveendra Venkata Nallagatla1, Octolia Togibasa1
1Department of Physics and Oxide Research Centre, Hankuk University of Foreign Studies , Yongin 449-791, Korea.
ACS Applied Materials & Interfaces
|March 10, 2016
Summary
Researchers developed uniform epitaxial thin films for resistive switching memory, overcoming issues like high forming voltage and inconsistent parameters. This advancement improves resistive random-access memory device performance.
Area of Science:
- Materials Science
- Solid State Physics
- Electrical Engineering
Background:
- Polycrystalline thin films in resistive switching memory exhibit wide parameter distributions.
- Inhomogeneity is a common but limited approach to address these variations.
- High forming voltages and parameter variability hinder resistive random-access memory (ReRAM) development.
Purpose of the Study:
- To achieve uniform resistive switching parameters and low forming voltage in ReRAM devices.
- To overcome limitations of polycrystalline films by maximizing thin film uniformity.
- To investigate the role of epitaxial growth in improving device performance.
Main Methods:
- Fabrication of SrFeOx/SrRuO3 heteroepitaxial structures on SrTiO3 substrates using pulsed laser deposition.
- Deposition of an Au top electrode via electron-beam evaporation.
- Characterization of bipolar resistance switching characteristics.
Main Results:
- Demonstrated uniform resistive switching parameters and a low forming voltage.
- Achieved a high on/off ratio and long data retention time.
- Observed narrow distributions in set/reset voltages and resistance states.
Conclusions:
- Uniform epitaxial SrFeOx thin films enable overcoming key ReRAM development hurdles.
- Local, reversible phase transformation between brownmillerite and perovskite structures underlies the observed switching behavior.
- Atomically uniform heteroepitaxial films are crucial for high-performance ReRAM.
