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Patterned Formation of Highly Coherent Nitrogen-Vacancy Centers Using a Focused Electron Irradiation Technique
Claire A McLellan, Bryan A Myers, Stephan Kraemer
1Institute for Molecular Engineering, University of Chicago , Chicago, Illinois 60637, United States.
Nano Letters
|March 25, 2016
Summary
We precisely control nitrogen-vacancy (NV) centers in diamond using advanced techniques. This enables high-quality NV centers in nanostructures for quantum information and sensing applications.
Area of Science:
- Quantum physics and materials science
- Nanotechnology and condensed matter physics
Background:
- Nitrogen-vacancy (NV) centers in diamond are promising qubits for quantum computing and sensing.
- Precise control over NV center location and properties is crucial for advanced applications.
Purpose of the Study:
- To demonstrate 3D and patterned localization of NV centers in diamond.
- To achieve long coherence times exceeding 1 ms for NV centers.
- To enable the formation of high-quality NV centers within diamond nanostructures.
Main Methods:
- Utilizing nitrogen delta-doping during chemical vapor deposition (CVD) for vertical confinement.
- Employing transmission electron microscope (TEM) electron irradiation for lateral confinement of vacancies.
- Characterizing the impact of electron energy and dose on NV formation.
Main Results:
- Achieved fully 3D and patterned localization of NV centers.
- Demonstrated coherence times exceeding 1 millisecond (ms).
- Successfully formed high-quality NV centers within diamond nanostructures.
Conclusions:
- The developed technique allows for precise 3D control of NV center placement in diamond.
- This method is vital for creating robust diamond nanostructures for quantum technologies.
- The findings pave the way for enhanced quantum information processing and sensing devices.
