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Strained GaAs/InGaAs Core-Shell Nanowires for Photovoltaic Applications.

K Moratis1, S L Tan2,3, S Germanis1,4

  • 1Department of Materials Science and Technology, University of Crete, P.O. Box 2208, 70013, Heraklion, Greece.

Nanoscale Research Letters
|April 3, 2016
PubMed
Summary
This summary is machine-generated.

Researchers grew strained core-shell GaAs/InGaAs nanowires on silicon substrates. Characterization revealed lower indium incorporation than expected, but with localized In-rich regions exhibiting high indium content.

Keywords:
CathodoluminescenceCore-shell GaAs/InGaAs nanowiresMicro-RamanMicro-photoluminescenceNanostructure characterizationPhotoluminescence

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Core-shell nanowires offer unique properties for electronic and optoelectronic applications.
  • Epitaxial growth of III-V semiconductors on silicon is crucial for integrating advanced functionalities onto silicon platforms.
  • Strained heterostructures are key to tuning material properties and device performance.

Purpose of the Study:

  • To report the successful growth of strained core-shell GaAs/InGaAs nanowires on Si (111) substrates.
  • To investigate the indium incorporation and distribution within these nanowires.
  • To characterize the optical properties of the grown nanowires.

Main Methods:

  • Molecular beam epitaxy (MBE) for nanowire growth.
  • Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) for structural analysis.
  • Micro-photoluminescence (µ-PL) spectroscopy for optical characterization.

Main Results:

  • Successfully grew GaAs/InGaAs core-shell nanowires on Si (111) with densities of 10^8 cm^-2.
  • Indium incorporation was lower than expected and showed a gradient along the nanowire axis.
  • Micro-photoluminescence revealed localized In-rich enclosures with up to 30% In content, emitting at 900-1000 nm.

Conclusions:

  • Strained core-shell GaAs/InGaAs nanowires can be grown on silicon substrates.
  • The growth process leads to non-uniform indium distribution with localized In-rich regions.
  • These findings are important for understanding and optimizing nanowire growth for optoelectronic devices.