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Graphene Coupled with Silicon Quantum Dots for High-Performance Bulk-Silicon-Based Schottky-Junction Photodetectors
Ting Yu1, Feng Wang2, Yang Xu2
1State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
Advanced Materials (Deerfield Beach, Fla.)
|April 11, 2016
Abstract:
Graphene is coupled with silicon quantum dots (Si QDs) on top of bulk Si to form a hybrid photodetector. Si QDs cause an increase of the built-in potential of the graphene/Si Schottky junction while reducing the optical reflection of the photodetector. Both the electrical and optical contributions of Si QDs enable a superior performance of the photodetector.

