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Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide

Kai-Huang Chen1, Kuan-Chang Chang2, Ting-Chang Chang3,4

  • 1Department of Electrical Engineering and Computer Science, Tung Fang Design Institute, Kaohsiung, Taiwan. d9131802@gmail.com.

Nanoscale Research Letters
|April 28, 2016
PubMed

Keywords:
GadoliniumIllumination effectNonvolatile memoryRRAMSilicon oxide

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