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Published on: November 28, 2017
Large Work Function Modulation of Monolayer MoS2 by Ambient Gases.
Si Young Lee1,2, Un Jeong Kim1,2, JaeGwan Chung1,2
1Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), and ‡Department of Energy Science, Department of Physics, Sungkyunkwan University , Suwon 440-746, Republic of Korea.
We discovered that ambient oxygen significantly alters the work function of molybdenum disulfide (MoS2) in two-dimensional (2D) materials. This modulation is crucial for tuning the electronic properties of 2D semiconductors for device applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanoscience
Background:
- Two-dimensional (2D) monolayer transition-metal dichalcogenides (TMDs) exhibit unique properties not found in bulk materials.
- Environmental factors can obscure the intrinsic properties of 2D materials, impacting their performance in electronic devices.
- Work function is a critical parameter for electronic and optoelectronic devices, representing the energy needed to extract an electron.
Purpose of the Study:
- To investigate the modulation of work function in molybdenum disulfide (MoS2) due to ambient gases.
- To understand the environmental effects on the electronic properties of 2D materials.
- To explore the potential of work function tuning for device applications.
Main Methods:
- In situ Kelvin probe technique for work function measurement.
- Ultraviolet photoemission spectroscopy (UPS) for confirmation.
- Theoretical calculations to support experimental findings.
- Fabrication of homojunction diodes by partial passivation of transistors.
- Photocurrent mapping to estimate depletion width.
Main Results:
- A significant work function modulation in MoS2 was observed with exposure to ambient gases, specifically oxygen (O2).
- The work function increased from 4.04 eV in vacuum to 4.47 eV upon O2 exposure, comparable to variations in graphene.
- Fabricated homojunction diodes exhibited ideal characteristics with an ideality factor close to one and perfect electrical reversibility.
- The estimated depletion width was approximately 200 nm, considerably narrower than in bulk semiconductors.
Conclusions:
- Ambient oxygen plays a critical role in modulating the work function of MoS2.
- The observed work function changes are substantial and can be leveraged for tuning electronic properties.
- The narrow depletion width in MoS2 devices suggests potential for high-performance nanoelectronic applications.
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