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Lithography-free shell-substrate isolation for core-shell GaAs nanowires.

Tuomas Haggren1, Alexander Pyymaki Perros, Hua Jiang

  • 1Department of Micro- and Nanosciences, Micronova, Aalto University, PO Box 13500, FI-00076, Finland.

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|June 1, 2016
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Summary

A new lithography-free method rapidly creates isolated GaAs core-shell nanowires using spin-on-glass. In situ annealing effectively restores nanowire growth after interruption, enabling scalable production.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Gallium Arsenide (GaAs) core-shell nanowires (NWs) are crucial for advanced electronic and optoelectronic devices.
  • Achieving substrate isolation for NW shells is a significant challenge in scalable fabrication.
  • Existing methods for NW growth and modification often involve complex lithography steps.

Purpose of the Study:

  • To develop a facile, scalable, and lithography-free technique for constructing substrate-isolated GaAs core-shell NWs.
  • To investigate the impact of growth interruption and surface passivation on NW regrowth.
  • To optimize the process for high-throughput industrial production.

Main Methods:

  • Utilized atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) with gold nanoparticles for vapor-liquid-solid (VLS) growth.
  • Interrupted NW growth to apply a spin-on-glass (SOG) layer, followed by resuming core-shell NW growth.
  • Employed HF etching and in situ annealing to remove SOG residues and native oxides before regrowth.

Main Results:

  • Successfully demonstrated the resumption of both axial core and radial shell growth after interruption and air exposure.
  • Identified in situ annealing as superior to HF etching for removing contaminants and enabling pristine core-shell NW regrowth.
  • Observed enhanced axial growth rates when SOG covered the substrate and confirmed diode behavior in fabricated p-core/n-shell NWs.

Conclusions:

  • The developed lithography-free MOVPE technique enables scalable, high-throughput production of shell-substrate isolated GaAs core-shell NWs.
  • In situ annealing is a critical step for successful regrowth of interrupted NWs, ensuring high crystal quality.
  • This method offers a promising pathway for industrial-scale manufacturing of advanced NW-based devices.