Rigorous theoretical analysis of a surface-plasmon nanolaser with monolayer MoS₂ gain medium

Lasers based on monolayer (ML) transition-metal dichalcogenide semiconductor crystals have the potential for low threshold operation and a small device footprint; however, nanophotonic engineering is required to maximize the interaction between the optical fields and the three-atom-thick gain medium. Here, we develop a theoretical model to design a direct bandgap optically pumped nanophotonic integrated laser. Our device utilizes a gap-surface-plasmon optical mode to achieve subwavelength optical confinement and consists of a high-index GaP nanowire atop an ML MoS₂ film on an Ag substrate. The optical field and material medium are analyzed using a three dimensional finite-difference time-domain method and a first-principles calculation based on the density functional theory, respectively. The nanolaser is designed to have a threshold of ∼0.6  μW under quasi-continuous wave operation on an excitonic transition at room temperature.