Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions

Area of Science:

• Materials Science
• Surface Science
• Semiconductor Physics

Background:

• Operando studies are crucial for understanding material properties under real operating conditions.
• Electron microscopy offers nanoscale insights into semiconductor doping.
• Spectroscopic Photoelectron Emission Microscopy (PEEM) provides high spatial and energy resolution for material analysis.

Purpose of the Study:

• To present the first operando spectroscopic PEEM study on a silicon p-n junction.
• To demonstrate the capability of PEEM for in situ analysis of electronic devices under bias.
• To highlight PEEM's potential for characterizing diverse advanced materials.

Main Methods:

• Operando Spectroscopic Photoelectron Emission Microscopy (PEEM).
• In situ application of electrical bias (forward and reverse) to a planar Si p-n junction.
• Analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons.

Main Results:

• Successful demonstration of operando PEEM on a Si p-n junction under bias.
• High spatial and energy resolution achieved for detailed device analysis.
• Validation of PEEM for characterizing local electronic and chemical properties.

Conclusions:

• Operando spectroscopic PEEM is a powerful tool for studying semiconductor devices under realistic operating conditions.
• This technique enables comprehensive analysis of material properties at near-device scales.
• PEEM is applicable to a wide range of advanced materials, including resistive oxides, memory devices, and ferroelectrics.