Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Two-dimensional (2D) materials like molybdenum disulfide (MoS2) offer unique electronic properties.
• Flat surfaces and lack of dangling bonds in MoS2 are advantageous for interface engineering.

Purpose of the Study:

• Investigate spin-polarized transport properties of Co/MoS2/Co and Ni/MoS2/Ni junctions.
• Determine the influence of MoS2 layer number on junction behavior.
• Assess the potential of MoS2 as a spacer in spintronic devices.

Main Methods:

• Density functional theory (DFT) calculations.
• Non-equilibrium Green's function (NEGF) method for transport properties.
• Simulation of junctions with varying MoS2 layer numbers (N=1, 3, 5).

Main Results:

• Well-defined interfaces formed between MoS2 and Co/Ni electrodes.
• Single-layer (SL) MoS2 junctions showed metallic characteristics due to strong MoS2-ferromagnet coupling.
• Few-layer MoS2 junctions exhibited tunneling behavior.
• Significant magnetoresistance and tunneling magnetoresistance observed with cobalt electrodes.

Conclusions:

• Flat single- and few-layer MoS2 serve as effective nonmagnetic spacers.
• MoS2-based junctions demonstrate potential for magnetoresistance and tunneling magnetoresistance devices.
• Interface quality is crucial for achieving desired transport properties.