Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Fermi Level Dynamics01:12

Fermi Level Dynamics

929
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
929
Energy Bands in Solids01:01

Energy Bands in Solids

2.3K
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
2.3K
Valence Bond Theory02:42

Valence Bond Theory

11.5K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
11.5K
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

2.0K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
2.0K
Fermi Level01:18

Fermi Level

2.2K
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
2.2K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.3K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.3K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Spin Dynamics in Open Quantum Systems: A DLvN-TDDFT Approach.

Journal of chemical theory and computation·2026
Same author

Conformational bifurcation drives dual transport regimes in molecular junctions: Unsupervised machine learning insights.

Smart molecules : open access·2026
Same author

An optically controlled synaptic device based on a PdSe<sub>2</sub>/α-In<sub>2</sub>Se<sub>3</sub> vdW heterostructure FET.

Materials horizons·2026
Same author

Author Correction: Switching graphitic polytypes in elastically coupled cavities.

Nature nanotechnology·2026
Same author

Switching graphitic polytypes in elastically coupled cavities.

Nature nanotechnology·2026
Same author

Chirality-Induced Orbital-Angular-Momentum Selectivity in Electron Transmission and Scattering.

Journal of chemical theory and computation·2025

Related Experiment Video

Updated: Mar 19, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

17.2K

Coherent commensurate electronic states at the interface between misoriented graphene layers.

Elad Koren1, Itai Leven2, Emanuel Lörtscher1

  • 1IBM Research - Zurich, Rueschlikon 8803, Switzerland.

Nature Nanotechnology
|June 9, 2016
PubMed
Summary

Researchers studied electrical transport in twisted bilayer graphene at room temperature. They discovered sharp conductivity peaks at specific rotation angles, indicating a new 2D electronic interface state with unique properties.

More Related Videos

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.2K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.5K

Related Experiment Videos

Last Updated: Mar 19, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

17.2K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

16.2K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.5K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene and layered materials possess unique electronic properties due to π-orbital coupling and symmetry breaking.
  • Twisted bilayer systems offer rich physics and application potential, particularly in electronic devices.

Purpose of the Study:

  • To investigate electrical transport across a tunable, twisted bilayer graphene interface at room temperature.
  • To identify specific rotation angles that lead to novel electronic interface states.

Main Methods:

  • Artificial creation of twisted interfaces in mesoscopic graphite pillars via mechanical actuation.
  • In situ control of the interlayer rotation angle.
  • Measurement of electrical transport properties and angular dependence of conductivity.

Main Results:

  • Observed conductivity consistent with phonon-assisted transport preserving electron momentum.
  • Identified sharp conductivity peaks at specific rotation angles (21.8° and 38.2°).
  • These peaks correspond to a commensurate crystalline superstructure forming a coherent 2D electronic interface state.

Conclusions:

  • The study demonstrates the formation of a coherent 2D electronic interface state in twisted bilayer graphene at specific angles.
  • These findings pave the way for a new class of 2D weakly coupled bilayer systems.
  • The discovered states have unexplored properties and potential applications in next-generation electronics.