Related Experiment Video
Updated: Mar 19, 2026
11:24
Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
17.2K
Self-Heating and Failure in Scalable Graphene Devices.
Thomas E Beechem1, Ryan A Shaffer1, John Nogan1
1Sandia National Laboratories, Albuquerque, New Mexico 87123, USA.
Scientific Reports
|June 10, 2016
Summary
Chemical vapor deposition (CVD) graphene devices handle over three times more power than epitaxial graphene before failing due to self-heating. Morphological irregularities, not thermal resistance, determine power limits in graphene.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Graphene devices are susceptible to self-heating induced failure.
- Understanding power handling limits is crucial for graphene device applications.
Purpose of the Study:
- To compare the self-heating failure mechanisms of graphene devices synthesized via chemical vapor deposition (CVD) and epitaxial methods.
- To identify the key factors limiting power handling in these devices.
Main Methods:
- Utilized infrared thermography and Raman imaging to analyze thermal behavior.
- Investigated graphene devices fabricated using both CVD and epitaxial synthesis techniques.
Main Results:
- CVD graphene devices exhibited over three times greater power dissipation capacity before failure compared to epitaxial graphene.
- Despite higher thermal resistance, CVD devices showed superior power handling.
- Localized heating, driven by morphological irregularities, was identified as the primary failure cause.
Conclusions:
- Graphene device morphology, rather than thermal resistance, is the critical determinant of power handling limits.
- Morphological irregularities in CVD graphene contribute to localized heating and influence failure modes.
