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Updated: Mar 19, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Memristive GaN ultrathin suspended membrane array
Mircea Dragoman1, Ion Tiginyanu2,3, Daniela Dragoman4,5
1National Research and Development Institute in Microtechnology, Str. Erou Iancu Nicolae 126A, Bucharest 077190, Romania.
Abstract:
We show that ultrathin GaN membranes, with a thickness of 15 nm and planar dimensions of 12 × 184 μm(2), act as memristive devices. The memristive behavior is due to the migration of the negatively-charged deep traps, which form in the volume of the membrane during the fabrication process, towards the unoccupied surface states of the suspended membranes. The time constant of the migration process is of the order of tens of seconds and varies with the current or voltage sweep.

