Related Experiment Video
Updated: Mar 19, 2026
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy
Gabriel Linares-García1, Lilia Meza-Montes2, Eric Stinaff3
1Instituto de Física, Benemérita Universidad Autónoma de Puebla, Av. San Claudio y, Blvd. 18 Sur Edif. 1IF1, Cd. Universitaria, Puebla, Mexico. glinares@ifuap.buap.mx.
Abstract:
Electronic and optical properties of InAs/GaAs nanostructures grown by the droplet epitaxy method are studied. Carrier states were determined by k · p theory including effects of strain and In gradient concentration for a model geometry. Wavefunctions are highly localized in the dots. Coulomb and exchange interactions are studied and we found the system is in the strong confinement regime. Microphotoluminescence spectra and lifetimes were calculated and compared with measurements performed on a set of quantum rings in a single sample. Some features of spectra are in good agreement.
