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The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Intrinsic Charge Carrier Mobility in Single-Layer Black Phosphorus.

A N Rudenko1, S Brener1, M I Katsnelson1

  • 1Institute for Molecules and Materials, Radboud University, Heijendaalseweg 135, 6525 AJ Nijmegen, Netherlands.

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We developed a theory for phonon scattering in black phosphorus (BP), finding two-phonon scattering is negligible at high carrier densities. Electron mobility in BP is highly anisotropic, unlike hole mobility.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Semiconductor Physics

Background:

  • Phonon scattering significantly impacts charge carrier mobility in 2D semiconductors.
  • Anisotropic materials like black phosphorus (BP) present unique scattering mechanisms.
  • Understanding scattering is crucial for optimizing electronic properties.

Purpose of the Study:

  • To develop a theory for single- and two-phonon scattering in anisotropic 2D semiconductors.
  • To apply this theory to single-layer black phosphorus (BP).
  • To investigate the carrier concentration and temperature dependence of scattering and mobility.

Main Methods:

  • Theoretical modeling of phonon-carrier interactions.
  • Analysis of single- and two-phonon scattering processes.
  • Calculation of carrier mobility in BP.

Main Results:

  • Two-phonon scattering in BP is negligible at carrier concentrations above 10^13 cm^-2, unlike in graphene.
  • Phonons exhibit anharmonic behavior at lower carrier densities.
  • Electron mobility in BP shows significant anisotropy (μxx/μyy∼6.2), while hole mobility is less anisotropic (μxx/μyy∼1.4).
  • Upper limits for mobility at room temperature are ~250 cm^2 V^-1 s^-1 for holes and ~700 cm^2 V^-1 s^-1 for electrons.

Conclusions:

  • The developed theory provides insights into charge transport in BP.
  • Anisotropy in electron mobility is a key characteristic of BP.
  • The findings are essential for designing future electronic devices based on BP.