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Updated: Mar 18, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Current-limiting and ultrafast system for the characterization of resistive random access memories
J Diaz-Fortuny1, M Maestro1, J Martin-Martinez1
1Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona (UAB), Bellaterra, Spain.
Abstract:
A new system for the ultrafast characterization of resistive switching phenomenon is developed to acquire the current during the Set and Reset process in a microsecond time scale. A new electronic circuit has been developed as a part of the main setup system, which is capable of (i) applying a hardware current limit ranging from nanoampers up to miliampers and (ii) converting the Set and Reset exponential gate current range into an equivalent linear voltage. The complete system setup allows measuring with a microsecond resolution. Some examples demonstrate that, with the developed setup, an in-depth analysis of resistive switching phenomenon and random telegraph noise can be made.
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