Efficient Low-Temperature Solution-Processed Lead-Free Perovskite Infrared Light-Emitting Diodes.

Area of Science:

• Materials Science
• Optoelectronics
• Solid-State Physics

Background:

• Perovskite materials are promising for optoelectronic devices.
• Development of lead-free alternatives is crucial for environmental and health reasons.
• Infrared light-emitting diodes (LEDs) are essential for various applications, including telecommunications and sensing.

Purpose of the Study:

• To achieve efficient lead-free perovskite infrared light-emitting diodes.
• To investigate the potential of cesium tin iodide (CsSnI₃) as an emissive layer.
• To characterize the performance of the developed infrared LEDs.

Main Methods:

• Fabrication of infrared light-emitting diodes using CsSnI₃ as the emissive layer.
• Characterization of the CsSnI₃ film morphology, including grain size and defect analysis.
• Measurement of device performance, including radiance and external quantum efficiency at various current densities and voltages.

Main Results:

• Successful fabrication of lead-free perovskite infrared LEDs using CsSnI₃.
• The CsSnI₃ film exhibited compact micrometer-sized grains with minimal pinholes and cracks.
• The device achieved a maximum radiance of 40 W sr^-1 m^-2 at 364.3 mA cm^-2 and a maximum external quantum efficiency of 3.8% at 4.5 V.

Conclusions:

• Lead-free CsSnI₃ is a viable material for efficient infrared light emission.
• The developed perovskite infrared LEDs demonstrate promising performance for optoelectronic applications.
• Further research can optimize CsSnI₃-based devices for enhanced efficiency and stability.