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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Te inclusion-induced electrical field perturbation in CdZnTe single crystals revealed by Kelvin probe force

Yaxu Gu1, Wanqi Jie1, Linglong Li2

  • 1State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, PR China; Key Laboratory of Radiation Detection Materials and Devices of Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi'an 710072, PR China.

Micron (Oxford, England : 1993)
|July 5, 2016
PubMed

Keywords:
Bias dependentCdZnTeElectrical propertyKelvin probe force microscopyTe inclusion

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