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Remote Plasma Oxidation and Atomic Layer Etching of MoS2.

Hui Zhu1, Xiaoye Qin1, Lanxia Cheng1

  • 1Department of Materials Science and Engineering, University of Texas at Dallas , Richardson, Texas 75080, United States.

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Summary

Exfoliated molybdenum disulfide (MoS2) oxidizes layer-by-layer with remote O2 plasma, enabling controlled surface functionalization and thinning for MoS2 device fabrication. Annealing removes the oxide layer, restoring the pristine MoS2 structure.

Keywords:
atomic etchingband bendingin situ XPSmolybdenum disulfideremote oxygen plasma

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Area of Science:

  • Materials Science
  • Surface Chemistry
  • Nanotechnology

Background:

  • Molybdenum disulfide (MoS2) is a promising 2D material with unique electronic properties.
  • Controlled surface modification of MoS2 is crucial for its integration into electronic devices.
  • Understanding oxidation mechanisms is key to preventing degradation and enabling functionalization.

Purpose of the Study:

  • To investigate the chemical oxidation of exfoliated MoS2 using remote O2 plasma.
  • To characterize the surface changes, structural integrity, and chemical composition during oxidation.
  • To explore the potential of remote O2 plasma for MoS2 surface functionalization and controlled thinning.

Main Methods:

  • Remote O2 plasma exposure at varying durations and temperatures.
  • Surface characterization using X-ray photoelectron spectroscopy (XPS).
  • Structural and topographical analysis via low energy electron diffraction (LEED) and atomic force microscopy (AFM).
  • Scanning tunneling microscopy (STM) for detailed structural verification.

Main Results:

  • Oxidation occurs in a layered manner, primarily affecting the topmost layer of MoS2.
  • Formation of S-O bonds and MoOx (molybdenum oxide) layers observed.
  • Uniform monolayer amorphous MoO3 forms after 5 min of plasma exposure at 200 °C.
  • Annealing at 500 °C effectively removes the MoO3 layer, restoring the ordered MoS2 structure.

Conclusions:

  • Remote O2 plasma provides a controllable method for MoS2 surface oxidation.
  • This process allows for surface functionalization and precise thinning of MoS2 layers.
  • The ability to remove the oxide layer makes it suitable for MoS2 device fabrication processes.