Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Characteristics of MOSFET01:17

Characteristics of MOSFET

1.1K
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
1.1K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

906
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
906
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

922
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
922
MOSFET01:16

MOSFET

1.4K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.4K
MOS Capacitor01:25

MOS Capacitor

1.7K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.7K
MOSFET Amplifiers01:17

MOSFET Amplifiers

598
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
598

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

A highly sensitive amplicon sequencing workflow for genomic surveillance of Usutu virus.

Virology journal·2026
Same author

Mimicking Pavlovian Conditioning with WSe<sub>2</sub> Phototransistors.

ACS applied materials & interfaces·2026
Same author

Investigation of the preanalytical stability of blood donor samples.

Transfusion·2026
Same author

Hydrogen Peroxide-Enabled High-Quality Transition Interface for Top-Gated Molybdenum Disulfide Field-Effect Transistors.

ACS nano·2026
Same author

Ozone Surface Pretreatment for Enhanced β-Ga<sub>2</sub>O<sub>3</sub>/Dielectric Interface Engineering.

ACS applied materials & interfaces·2026
Same author

Outcome Evaluation of NCI Clinical Scientist Research Career Development Award (K08) Program.

Journal of cancer education : the official journal of the American Association for Cancer Education·2026

Related Experiment Video

Updated: Feb 27, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K

Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy.

Peng Zhao1, Angelica Azcatl1, Yuri Y Gomeniuk2,3

  • 1Department of Materials Science and Engineering, The University of Texas at Dallas , 800 W Campbell Rd., Richardson, Texas 75080, United States.

ACS Applied Materials & Interfaces
|June 27, 2017
PubMed
Summary

This study investigated defects at the hafnium oxide/molybdenum disulfide (HfO2/MoS2) interface using capacitance-voltage measurements in MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs). Impedance spectroscopy revealed interface traps, crucial for developing advanced MOSFETs.

Keywords:
capacitance−voltage (C−V)electrical characterizationhigh-k dielectricsinterface defectsmolybdenum disulfide (MoS2)top-gated transistors

More Related Videos

Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.5K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.3K

Related Experiment Videos

Last Updated: Feb 27, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K
Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.5K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.3K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Physics

Background:

  • The HfO2/MoS2 interface is critical for next-generation transistors, but understanding its electronic properties and defects is essential for device performance.
  • Characterizing interface traps in transition metal dichalcogenide (TMD) based Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is challenging.

Purpose of the Study:

  • To investigate the electronic properties and defect characteristics of the HfO2/MoS2 interface in top-gated MoS2 MOSFETs.
  • To evaluate the effectiveness of multifrequency capacitance-voltage (C-V) and current-voltage (I-V) characterization, specifically impedance spectroscopy, as a metrology tool for interface defects.

Main Methods:

  • Fabrication of few-layer MoS2 MOSFETs with HfO2 gate dielectric layers (8 and 13 nm) using atomic layer deposition and in-situ UV-O3 surface functionalization.
  • Multifrequency capacitance-voltage (C-V) and current-voltage (I-V) measurements to analyze the impedance response of the HfO2/MoS2 gate stack.
  • Extraction of interface trap density (Dit) using high-low frequency and multiple-frequency C-V methods.

Main Results:

  • Impedance spectroscopy revealed frequency-dependent distortions and dispersions, indicative of specific interface defects at the HfO2/MoS2 interface.
  • Extracted interface trap density (Dit) values ranged from 2 × 10^11 to 1.2 × 10^13 cm^-2 eV^-1, depending on MoS2 layer thickness and HfO2 thickness.
  • Continuous HfO2 films were confirmed by low gate leakage currents (<10^-7 A/cm^2), attributed to the combined UV-O3 and HfO2 deposition process.

Conclusions:

  • Multifrequency impedance spectroscopy is a viable approach for characterizing electrically active defects at the HfO2/MoS2 interface using simple transistor structures.
  • This metrology tool is applicable to various TMD materials, surface treatments, and gate oxides, aiding the development of advanced TMD-based MOSFETs.