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Published on: April 9, 2018
Synthesis, Crystal Structure, Theoretical, and Resistivity Study of BaUSe3
Jai Prakash1, Maria S Tarasenko1, Adel Mesbah1,2
1Department of Chemistry, Northwestern University , 2145 Sheridan Road, Evanston, IL 60208-3113, United States.
The synthesis of black BaUSe3 reveals a semiconductor with a calculated 2.5 eV band gap. Experimental data suggests a smaller optical gap, highlighting challenges in DFT calculations for 5f materials.
Area of Science:
- Solid State Chemistry
- Materials Science
- Computational Materials Science
Background:
- Barium Uranium Selenide (BaUSe3) is a novel black-colored compound.
- Understanding its electronic and structural properties is crucial for materials science applications.
Purpose of the Study:
- To synthesize and characterize BaUSe3.
- To investigate its crystal structure, electronic band structure, and magnetic properties.
- To reconcile discrepancies between theoretical predictions and experimental observations.
Main Methods:
- High-temperature synthesis using CsCl flux.
- X-ray diffraction for structural analysis.
- Density Functional Theory (DFT) for electronic structure calculations.
- Resistivity measurements and UV-Vis spectroscopy for optical properties.
Main Results:
- BaUSe3 was synthesized at 1173 K and crystallizes in the GdFeO3 structure type.
- DFT calculations predict an antiferromagnetic ground state and a 2.5 eV band gap.
- Experimental measurements indicate a smaller optical gap and inconsistency with DFT predictions.
- Structural stability was confirmed between 100 K and 298 K.
Conclusions:
- BaUSe3 exhibits complex electronic properties challenging for current DFT methods.
- Discrepancies suggest potential midgap states due to impurities or limitations in theoretical models for 5f materials.
- Further investigation is needed to fully understand the electronic behavior of BaUSe3.
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