Manipulation of Nanoscale Domain Switching Using an Electron Beam with Omnidirectional Electric Field Distribution

Reversible ferroelectric domain (FD) manipulation with a high spatial resolution is critical for memory storage devices based on thin film ferroelectric materials. FD can be manipulated using techniques that apply heat, mechanical stress, or electric bias. However, these techniques have some drawbacks. Here we propose to use an electron beam with an omnidirectional electric field as a tool for erasable stable ferroelectric nanodomain manipulation. Our results suggest that local accumulation of charges contributes to the local electric field that determines domain configurations.