Related Experiment Video
Updated: Mar 17, 2026
14:58
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
15.5K
Injection-induced, tunable all-optical gating in a two-state quantum dot laser.
Optics Letters
|July 30, 2016
Summary
We demonstrate all-optical gating in quantum dot lasers. Optical injection controls emission states, enabling tunable excited-state pulsations by creating ground-state dropouts.
Area of Science:
- Optics and Photonics
- Semiconductor Lasers
- Quantum Dot Devices
Background:
- Quantum dot lasers exhibit complex emission dynamics.
- Controlling emission states is crucial for laser applications.
- All-optical control offers advanced modulation capabilities.
Purpose of the Study:
- To demonstrate and characterize a tunable all-optical gating phenomenon.
- To investigate the switching of emission between ground and excited states.
- To utilize ground-state dropouts for controlling excited-state pulsations.
Main Methods:
- Utilizing a single-section quantum dot laser.
- Employing optical injection into the material's ground state.
- Detuning the master laser to induce periodic ground-state dropouts.
- Performing numerical simulations with a rate equation model.
Main Results:
- Achieved tunable all-optical gating by switching emission states.
- Demonstrated complete suppression of excited-state emission via ground-state injection.
- Observed periodic ground-state dropouts when the master laser is detuned.
- Validated experimental findings with rate equation model simulations.
Conclusions:
- All-optical gating is feasible in quantum dot lasers.
- Ground-state dropouts effectively gate excited-state pulsations.
- The demonstrated phenomenon offers precise control over laser dynamics.
