Related Experiment Video
Updated: Mar 16, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 2, 2013
Crystal Phase Effects in Si Nanowire Polytypes and Their Homojunctions
Michele Amato, Thanayut Kaewmaraya, Alberto Zobelli
1Dipartimento di Fisica, Università di Roma Tor Vergata , Via della Ricerca Scientifica 1, 00133 Roma, Italy.
Abstract:
Recent experimental investigations have confirmed the possibility to synthesize and exploit polytypism in group IV nanowires. Driven by this promising evidence, we use first-principles methods based on density functional theory and many-body perturbation theory to investigate the electronic and optical properties of hexagonal-diamond and cubic-diamond Si NWs as well as their homojunctions. We show that hexagonal-diamond NWs are characterized by a more pronounced quantum confinement effect than cubic-diamond NWs. Furthermore, they absorb more light in the visible region with respect to cubic-diamond ones and, for most of the studied diameters, they are direct band gap materials. The study of the homojunctions reveals that the diameter has a crucial effect on the band alignment at the interface. In particular, at small diameters the band-offset is type-I whereas at experimentally relevant sizes the offset turns up to be of type-II. These findings highlight intriguing possibilities to modulate electron and hole separations as well as electronic and optical properties by simply modifying the crystal phase and the size of the junction.
More Related Videos
08:58Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling
Published on: January 28, 2021
09:14Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
Published on: December 7, 2017
Related Concept Videos
Types of Semiconductors
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
P-N junction
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Imperfections in Crystal Structure: Stoichiometric Point Defects