Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents

Area of Science:

• Materials Science
• Electrical Engineering
• Semiconductor Physics

Background:

• Two-dimensional semiconductors, particularly transition-metal dichalcogenides (TMDs), are crucial for advanced logic and memory applications.
• Molybdenum disulfide (MoS2) shows promise for scaled transistors due to its wide band gap and high effective masses, suggesting low off-state leakage.

Purpose of the Study:

• To demonstrate the operational viability of dynamic memory circuits using MoS2 field-effect transistors (FETs).
• To experimentally verify the predicted ultra-low leakage currents in MoS2 FETs for low-power memory applications.

Main Methods:

• Fabrication and characterization of one- and two-transistor dynamic memory circuits utilizing MoS2 MOSFETs.
• Measurement of retention times and leakage currents in the MoS2-based memory cells.

Main Results:

• Successful operation of MoS2-based dynamic memory circuits was demonstrated.
• Leakage currents as low as 1.7 × 10⁻¹⁵ A/μm were measured in a two-transistor MoS2 memory cell, below conventional measurement limits.

Conclusions:

• MoS2 MOSFETs exhibit extremely low leakage currents, making them highly suitable for low-power dynamic memory applications.
• The findings support the potential of MoS2 for future energy-efficient integrated circuits and memory devices.