Related Experiment Video
Updated: Mar 15, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Enhanced Thermionic-Dominated Photoresponse in Graphene Schottky Junctions
Joaquin F Rodriguez-Nieva, Mildred S Dresselhaus, Justin C W Song1
1Walter Burke Institute for Theoretical Physics and Institute of Quantum Information and Matter, California Institute of Technology , Pasadena, California 91125, United States.
We propose a novel photoresponse in graphene Schottky junctions. This regime efficiently extracts energy via thermionic emission of hot carriers, enabling tunable responsivity in nanoscale systems.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Vertical heterostructures of van der Waals materials offer advanced control over nanoscale charge and energy transport.
- Graphene-based devices are crucial for developing next-generation electronic and optoelectronic applications.
Purpose of the Study:
- To propose and theoretically investigate a unique photoresponse regime in graphene Schottky junctions.
- To explore the potential for efficient vertical energy extraction via coupled heat and charge flows.
Main Methods:
- Theoretical modeling of charge and energy transport in graphene Schottky junctions.
- Analysis of thermionic emission of hot carriers and electron-lattice cooling dynamics.
- Investigation of the conditions for vertical energy transport dominance.
Main Results:
- A novel photoresponse characterized by strongly coupled vertical heat and charge flows is proposed.
- Efficient power extraction across the graphene active area via thermionic emission is demonstrated.
- A large, tunable internal responsivity with nonmonotonic temperature dependence is predicted, peaking at specific electronic temperatures.
Conclusions:
- The proposed regime offers a new pathway for engineering photoresponse in optically active graphene heterostructures.
- This work highlights the potential of graphene Schottky junctions for advanced photodetector applications.
- Efficient vertical energy transport via hot carrier thermionic emission is key to achieving high responsivity.
Related Concept Videos
Photoelectric Effect
Schottky Barrier Diode
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Thermal and Photochemical Electrocyclic Reactions: Overview
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

