2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic...

Area of Science:

• Photonics
• Materials Science
• Semiconductor Devices

Background:

• Silicon photonics offers miniaturization and cost-efficiency for optical systems.
• III-V semiconductors are crucial for light emission, but monolithic integration with silicon is challenging.
• Quantum well lasers are key components for specific wavelength generation.

Purpose of the Study:

• To demonstrate heterogeneously integrated InP-based type-II quantum well Fabry-Perot lasers on silicon waveguides.
• To achieve laser emission in the 2.3 µm wavelength range for sensing applications.
• To assess the potential for fully integrated III-V/silicon photonics spectroscopic sensors.

Main Methods:

• Fabrication of InP-based "W"-shaped InGaAs/GaAsSb multi-quantum-well gain sections.
• Integration of III-V materials onto silicon waveguide circuits using heterogeneous integration.
• Design and implementation of silicon Bragg grating reflectors to form the laser cavity.
• Characterization of laser performance in continuous-wave (CW) and pulsed operation.

Main Results:

• Demonstrated Fabry-Perot lasers heterogeneously integrated on silicon waveguides emitting at 2.3 µm.
• Achieved a threshold current density of 2.7 kA/cm² and 1.3 mW output power at 5 °C in CW operation (2.35 μm).
• Obtained peak output power exceeding 3.7 mW with a threshold current density of 1.6 kA/cm² at room temperature in pulsed regime.

Conclusions:

• Heterogeneous integration of InP-based quantum well lasers on silicon is feasible.
• The demonstrated material system and integration method are promising for 2 µm wavelength photonic integrated circuits.
• This work supports the development of fully integrated III-V/silicon photonics spectroscopic sensors.