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Coplanar-waveguide-based silicon Mach-Zehnder modulator using a meandering optical waveguide and alternating-side PN
Optics Letters
|September 16, 2016
Summary
This study presents a silicon Mach-Zehnder modulator achieving a low 4.5V π-phase-shift voltage and ~20 GHz electro-optic bandwidth. The novel electrode design minimizes signal distortion for improved performance in optical communications.
Area of Science:
- Photonics
- Electrical Engineering
- Materials Science
Background:
- Silicon photonics enables integrated optical circuits.
- Mach-Zehnder modulators (MZMs) are key components for optical signal modulation.
- Achieving high electro-optic (EO) bandwidth and low driving voltage is crucial for high-speed optical communication.
Purpose of the Study:
- To develop a silicon Mach-Zehnder modulator with enhanced electro-optic (EO) bandwidth and low driving voltage.
- To suppress signal distortion caused by parasitic slot-line modes in silicon modulators.
- To optimize the electrode structure for improved modulator performance.
Main Methods:
- Utilized a coplanar waveguide transmission-line electrode structure.
- Incorporated a meandering optical waveguide design.
- Employed alternating-side PN junction loading of electrodes.
Main Results:
- Demonstrated a silicon Mach-Zehnder modulator (MZM).
- Achieved a π-phase-shift voltage (Vπ) of 4.5 V.
- Obtained an electro-optic (EO) 3 dB bandwidth of approximately 20 GHz for a 5 mm phase shifter.
Conclusions:
- The novel electrode structure effectively suppresses parasitic slot-line modes, reducing signal distortion.
- The demonstrated silicon MZM offers a low Vπ and high EO bandwidth, competitive with existing technologies.
- This work contributes to the advancement of high-performance silicon modulators for optical communication systems.
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